同义词 X
  • 掺杂

    译词

  • dopant (12527)
  • doping (11376)
  • surface (3840)
  • doping c (1948)
  • addition (1333)
  • thin film (605)
  • fill (558)
  • doping level (292)
  • doping element (216)
  • sol-gel (190)
  • impurity doping (163)
  • p-type doping (146)
  • doped material (143)
  • mixing (98)
  • substitution (93)
  • doping agent (81)
  • doped lithium (74)
  • polymerization (71)
  • doped structure (50)
  • electrochemical properties (45)
  • doping impurities (44)
  • inclusion (33)
  • co-doping (31)
  • rubrene (26)
  • doping ions (26)
  • adulteration (26)
  • dopping (25)
  • b doping (20)
  • sophisticate (19)
  • p type doping (16)
  • intermingle (14)
  • doped spinel (11)
  • doping behavior (10)
  • co doping (8)
  • doper (8)
  • surface modification (6)
  • ni doping (4)
  • admixing (3)
  • ca doping (3)
  • sn doping (2)
  • body doping (2)
  • dopen (2)
  • dye doping (1)
  • sol gel (1)
  • dopant

    n.    

    变形:   english【复】

  • 1这些文献中描述的纳米粒子包含稀土掺杂元素和至少一种改善信号放大的元素,例如铝、镧、锑、铋或一些其它元素。
     The nanoparticles described in these documents include a rare-earth-dopant element together with at least one element that improves the amplification of the signal, such as aluminum, lanthanum, antimony, bismuth, or some other element.
     来源:专利文献   中文专利号:CN102087378A   英文专利号:US2011116160

  • doping

    n.    

    变形:   english【复】

  • 1可以在待形成前表面金属接触部的位置中进行该硅的激光掺杂以达到0.1至12微米范围的结深度(junction depth),优选地在范围1至5微米内的结深度。
     The laser doping of the silicon, in locations where front surface metal contacts are to be formed, may performed to achieve a junction depth in the range 0.1 to 12 microns and preferably in the range 1 to 5 microns.
     来源:专利文献   中文专利号:CN102612735A   英文专利号:US2012282722

  • surface

    n.    

    变形:   english【复】

  • 1现参见图1,其中示出的是根据本发明将钨掺杂剂退火进入坩埚4的内表面的装置2。
     Referring now to FIG. 1, there is shown an apparatus 2 for annealing a tungsten dopant into the inside surface of a crucible 4 in accordance with the present invention.
     来源:专利文献   中文专利号:CN1343264A   英文专利号:US6350312

  • doping c

    n.    

    变形:   english【复】

  • 1因此,具有大于发射极区域121的杂质掺杂厚度和杂质掺杂浓度的重掺杂区域123或1232位于前电极141或141a和前汇流条142或142a下面。
     Hence, the heavily doped region 123 or 1232 having the impurity doping thickness and the impurity doping concentration greater than the emitter region 121 is positioned under the front electrodes 141 or 141a and the front bus bars 142 or 142a.
     来源:专利文献   中文专利号:CN102593204A   英文专利号:US2012174975

  • addition

    n.    

    变形:   english【复】

  • 1除了控制接合层106的组成之外,通过有意原子掺杂(例如,用原子掺杂)也可以控制接合层106的导电性。
     In addition to controlling the composition of the bonding layer 106, the conductivity of the bonding layer 106 may be managed through intentional atomic doping (e.g., doping with atoms).
     来源:专利文献   中文专利号:CN102640303A   英文专利号:US2011011450

  • thin film

    n.    

    变形:   english【复】

  • 1步骤133d、去掉第二薄膜晶体管的沟道区域的金属薄膜和掺杂非晶硅薄膜,并去除部分非晶硅薄膜,形成第二薄膜晶体管的源极、漏极和沟道。
     Step 133d, the metal thin film and the doped amorphous silicon thin film in the channel region of the second TFT are removed, and a part of the amorphous silicon thin film in the channel region of the second TFT is removed, thus the source electrode, the drain electrode and the channel of the second TFT are formed.
     来源:专利文献   中文专利号:CN102466937A   英文专利号:US2012104398

  • fill

    n.    

    变形:   english【复】

  • 1若第一多晶硅填充30是P+掺杂,则第二填充36当然也是P+掺杂
     In the case where the first polysilicon fill 30 is doped P+, the second fill 36 will of course also be doped P+.
     来源:专利文献   中文专利号:CN1279509A   英文专利号:US6207494

  • doping level

    n.    

    变形:   english【复】

  • 1(2) 在WO_3掺杂的La_(2/3)Ba_(1/3)MnO_3中,当x小于15%时,烧结温度对样品的室温磁电阻效应影响很明显。
     (2) The magnetoresistances at room temperature are influenced by the sintering temperature obviously in WO_3 doped La_2/3Ba_1/3MnO_3, when WO_3 doping level is less than 15%.
     来源:学术文献

  • doping element

    n.    

    变形:   english【复】

  • 1如该图所示,当在BiFeO3等过渡金属化合物的复合氧化物中,掺杂(共掺)n型掺杂元素以及p型掺杂元素时,p型缺陷通过n型掺杂元素被抵消,n型缺陷通过p型掺杂元素被抵消。
     As shown in FIG. 10, if the complex oxide which is a transition metal compound of BiFeO3 is simultaneously doped (co-doped) with the n-type doping element and the p-type doping element, p-type defects are offset by the n-type doping element, and n-type defects are offset by the p-type doping element.
     来源:专利文献   中文专利号:CN102555478A   英文专利号:US2012162320

  • sol-gel

    n.    

    变形:   english【复】

  • 1通过溶胶—凝胶法制备了一系列Nd~(3+),Pr~(3+),Er~(3+)和Dy~(3+)均匀掺杂的纳米二氧化钛(Ln/TiO_2)材料。
     A series of Nd~(3+), Pr~(3+), Er~(3+), and Dy~(3+) (0.25-5 at.%) homogeneously doped nanocrystalline titanium dioxides (Ln/TiO_2) were prepared by an easy sol-gel method, and their size and phase transformation were investigated.
     来源:学术文献

  • impurity doping

    n.    

    变形:   english【复】

  • 1在射极层210和/或背面场层220的不包含杂质或者具有低杂质掺杂浓度的部分产生钝化效应。
     The passivation effect is generated in a portion of the emitter layer 210 and/or the back surface field layer 220 that does not contain impurities or that has a low impurity doping concentration.
     来源:专利文献   中文专利号:CN102074593A   英文专利号:US2011056544

  • p-type doping

    n.    

    变形:   english【复】

  • 1前述高掺杂的通孔和区535可以用与在器件区域中用于形成p+区135和源极金属110至阱134的通孔相同的制造工艺进行,如图6所示和如上所述。
     The aforementioned vias and regions 535 of enhanced p-type doping may be made with the same manufacturing process that is used to form p+ regions 135 and the vias of source metal 110 to wells 134 in the device region, as illustrated in FIG. 6 and described above.
     来源:专利文献   中文专利号:CN102246306A   英文专利号:US2010140695

  • doped material

    n.    

    变形:   english【复】

  • 1微透镜阵列21的结构也会引起散射光,特别是相邻的微透镜元件的分隔区域,光可能从这些区域散射,并且微透镜元件的表面,在渐变折射率型微透镜的情况下正常和掺杂材料之间的表面,也会散射光。
     The structure of the microlens array 21 can also lead to stray light, particularly the regions separating adjacent microlens elements from which light can be scattered, and the surfaces of the microlens elements, or, in the case of gradient index type microlens, the interface between normal and doped material, which can also scatter light.
     来源:专利文献   中文专利号:CN1134209A   英文专利号:US5623349

  • mixing

    n.    

    变形:   english【复】

  • 1通过CVD方法利用通过将包含磷(P)的掺杂气体与硅烷源气体进行混合而获得的混合气体,形成栅电极材料86。
     The gate electrode material 86 is formed by a CVD method using mixed gas obtained by mixing dopant gas containing phosphorus (P) and silane source gas.
     来源:专利文献   中文专利号:CN101740592A   英文专利号:US2010117126

  • substitution

    n.    

    变形:   english【复】

  • 1居里温度TC随着Ga~(3+)掺杂的增加而线性减小,每增加1% Ga~(3+)居里温度TC下降大约15.8 K。
     Curie temperature TC decreases linearly with the substitution at a rate of about 15.8 K per 1% Ga.
     来源:学术文献

  • doping agent

    n.    

    变形:   english【复】

  • 1CeO2被DBSA包裹着,DBSA做为掺杂剂进入PAn中,PAn和CeO2之间不存在化学键的结合。
     But there are no chemical interaction between PAn and CeO2. CeO2 is been packed by DBSA which come in PAn by way of doping agent.
     来源:学术文献

  • doped lithium

    n.    

    变形:   english【复】

  • 1在这种情况下,通过实施例2制成的非常小的磷酸铁颗粒(见图5)使得能够合成具有非常高功率性能的掺杂磷酸铁锂。
     In this case the very small ferric phosphate particles produced by Example 2 (see FIG. 5) enabled the synthesis of doped lithium iron phosphate with very high power performance.
     来源:专利文献   中文专利号:CN102695760A   英文专利号:US2011068295

  • polymerization

    n.    

    变形:   english【复】

  • 1凝胶原位聚合法制备三异丙氧基铒掺杂的PMMA材料及其性质研究
     Study on Properties of PMMA Doped with Erbium Triisopropoxide by Preparationof Gel In-Situ polymerization
     来源:学术文献

  • doped structure

    n.    

    变形:   english【复】

  • 1另外,构成超晶格结构的n侧第1层和n侧第2层也可以是相同的组成(GaInN、AlGaN或GaN),而且是组合了掺杂结构/未掺杂结构的结构。
     The n-side first layer and n-side second layer that configure the superlattice structure may have the same composition (GaInN, AlGaN, or GaN), and may also have a combined doped structure/undoped structure.
     来源:专利文献   中文专利号:CN102484177A   英文专利号:US2012113658

  • electrochemical properties

    n.    

    变形:   english【复】

  • 1纳米级β-氢氧化镍和氧化镍掺杂Co(OH)_2复合电极的电化学性能
     Study on electrochemical properties of nano NiO and β-Ni(OH)_2 doped with Co(OH)_2
     来源:学术文献

  • doping impurities

    n.    

    变形:   english【复】

  • 1此外,PMOS晶体管将砷(As)用于掺杂杂质,以便形成沟道。
     Further, the PMOS transistor employs arsenic (As) for doping impurities in order to form a channel.
     来源:专利文献   中文专利号:CN101436426A   英文专利号:US2009122630

  • inclusion

    n.    

    变形:   english【复】

  • 1催化剂材料的掺杂使熔断器16对所感应的电流非常敏感。
     The inclusion of the accelerator substance makes the fuse 16 very sensitive to induced current.
     来源:专利文献   中文专利号:CN1271450A   英文专利号:US5861809

  • co-doping

    n.    

    变形:   english【复】

  • 1复合掺杂2.5wt%B_2O_3+xBi_2O_3(x=0.25~1.0wt%)时,980℃烧结的Co_2Z相对密度均在90%以上,当Bi203的添加量为0.75 wt%时,980℃烧结的Co_2Z陶瓷的体积密度为4.93g/cm~3,相对密度为93%。
     By co-doping 3.0wt% B_2O_3-Bi_2O_3 aids with B_2O_3-Bi_2O_3 mol proportion is 1:4, the bulk density is 4.81 g/cm3 and relative density is 90%.
     来源:学术文献

  • rubrene

    n.    

    变形:   english【复】

  • 1Hamada和他的合作伙伴在1995年报导了一种改进的以红荧烯(Rubrene)作为掺杂剂的SH-B型有机EL单元(Y.Hamada等,Jpn.J.Appl.Phys.34(1995),L824-L826)。
     u.m. Hamada and coworker in 1995 reported a modified SH-B type of organic EL cell (Y. Hamada et. al, Jpn. J. Appl. Phys. 34 (1995), L824-L826) with rubrene as a dopant.
     来源:专利文献   中文专利号:CN1176286A   英文专利号:US5668438

  • doping ions

    n.    

    变形:   english【复】

  • 1如图4以及图5所示,通过在N阱160的表面掺杂离子,形成多个P型扩散层。
     As shown in FIG. 4 and FIGS. 5A and 5B, by doping ions in the surface of the N wells 160, a plurality of P type diffusion layers are formed.
     来源:专利文献   中文专利号:CN103106872A   英文专利号:US2013119412

  • adulteration

    n.    

    变形:   english【复】

  • 1其次是进行了(Ta2O5)1-x(TiO2)x掺杂改性的研究,分析了TiO2 掺杂量对(Ta2O5)1-x(TiO2)x 材料介电性能的影响,并对其微观机理进行了初步探索;
     Secondly, we studied the dielectric properties of (Ta2O5)1-x(TiO2)x ceramics, analyzed the influence on dielectric properties with various TiO2 adulteration, and explained its micromechanism preliminarily. The last section is introduction of the anisotropism.
     来源:学术文献

  • dopping

    n.    

    变形:   english【复】

  • 1掺杂少量Pb有利于高T_c相生成和稳定。
     Pb dopping is benificial to forming and stabilizing of high T_cphase.
     来源:学术文献

  • b doping

    n.    

    变形:   english【复】

  • 1得到掺杂摩尔浓度为5%,浸渍涂膜8层,经773K热处理后的SnO_2:Sb薄膜,其方块电阻为78 Ω/口,载流子浓度可达1.1×10~(21)cm~(-3),迁移率为1.46cm~2V~(-1)s~(-1),可见光平均透射率为70%。
     It can be conclude: The sheet resistance can reach 78Ω/口, the number of carriers is l. lx10~21 cm~-3 with mobility 1.46cm2V~-1s~-1, and the visible transmission is 70% with Infrared reflection about 90% after the SnO_2:Sb film has been treated under 773K temperature, with Sb doping level 5%, dipping 8 times.
     来源:学术文献

  • sophisticate

    n.    

    变形:   english【复】

  • 1如图所示,在P-沟道晶体管150a中,栅极绝缘层151b分别形成在相应的硅/锗硅合金109c,109p上,使晶体管150a的阈值电压(即在沟道区域153形成的导电沟道的电压)可通过合金109c,109p和材料151b与151a的特性结合漏极和源极区域154相应的特性确定,也可基于复杂的掺杂物轮廓形成,如前所述。
     As illustrated, in the P-channel transistors 150A, the gate insulation layers 151B are formed on the corresponding silicon/germanium alloys 109C, 109P, respectively, so that a threshold voltage of the transistors 150A, i.e., the voltage at which a conductive channel forms in a channel region 153, may be determined by the characteristics of the alloys 109C, 109P and the materials 151B and 151A in combination with the corresponding characteristics of drain and source regions 154, which may also be formed on the basis of sophisticated dopant profiles, as previously explained.
     来源:专利文献   中文专利号:CN102388451A   英文专利号:US2010193881

  • p type doping

    n.    

    变形:   english【复】

  • 1备选地并且如图14中所示,在衬底3上形成了两个外延层,即具有与衬底3相反的掺杂(在该示例中为N型)的中间外延层46和位于中间外延层46上并且具有P型掺杂的形成有源层45的第二外延层。
     Alternatively, and as shown in FIG. 14, on the substrate 3, two epitaxial layers are formed, namely, an intermediate epitaxial layer 46, having an opposite doping to the substrate 3 (in the example of an N type), and a second epitaxial layer, which forms the active layer 45, laid on the intermediate epitaxial layer 46, and having a p type doping.
     来源:专利文献   中文专利号:CN102782839A   英文专利号:US2013057312

  • intermingle

    n.    

    变形:   english【复】

  • 1在实施方案1和4中,氮以及氮和掺杂剂气体的气体混合物在供给至反应容器之前进行互相混合。
     In Embodiments 1 and 4, nitrogen and a gas mixture of nitrogen and dopant gas are intermingled before supplying to the reaction vessel.
     来源:专利文献   中文专利号:CN101429678A   英文专利号:US2009126623

  • doped spinel

    n.    

    变形:   english【复】

  • 1掺杂尖晶石LiAl_xMn_(2-x)O_4的合成与性能研究
     Study of synthesis and characterization of doped spinel LiAl_x Mn_(2-x) O_4
     来源:学术文献

  • doping behavior

    n.    

    变形:   english【复】

  • 1在十二烷基苯磺酸钠 (SDBS)和盐酸共存体系下合成聚苯胺时 ,对阴离子DBS- 和Cl- 发生竞争掺杂行为。
     When polyaniline was prepared by solution of coexistence of sodium dodecylbenzene sulfonate (SDBS) and hydrochloric acid, two kinds of counterion (DBS - and Cl -) occured competing doping behavior.
     来源:学术文献

  • co doping

    n.    

    变形:   english【复】

  • 1由于氧化镓的Co掺杂,较小量值的二氧化钛足以补偿氧化镓在短波范围内相对的吸收最小值。
     Due to co doping with gallium oxide comparatively small amounts of titanium oxide are enough to compensate the relative absorption minimum of gallium oxide in the shortwave range.
     来源:专利文献   中文专利号:CN102378925A   英文专利号:US2012056106

  • doper

    n.    

    变形:   english【复】

  • 1820cm的路径失衡足以使激光频率跳动,以设定系统噪底电平,这意味着接收干涉仪36路径失衡和掺杂光纤段18长度的容差大约为一厘米量级,以便保持不同轴向模的所有干涉信号中的适当相位关系。
     A path imbalance of 820 cm is sufficient to cause laser frequency jitter to set the system noise floor level, meaning that tolerances on the receiving interferometer 36 path imbalance and doper fiber portion 18 length are on the order of approximately one centimeter, in order to maintain the proper phase relationship among all the interference signals from the different longitudinal modes.
     来源:专利文献   中文专利号:CN1215155A   英文专利号:US5867258

  • surface modification

    n.    

    变形:   english【复】

  • 1同样,本发明的方法也应能在粒子,特别是ZrO2粒子或者其胶体的掺杂、分散介质和表面改性方面实现广泛的应用。
     The process according to the invention should also permit a broad application spectrum with regard to doping, dispersing medium and surface modification of the particles, in particular the ZrO2 particles or of the colloids thereof.
     来源:专利文献   中文专利号:CN101124166A   英文专利号:US2009004098

  • ni doping

    n.    

    变形:   english【复】

  • 1掺杂阴极材料LiNi_xC0_(1-x)0_2的制备研究
     PREPARATION OF LiNi_xCO_(1-x)O_2 CATHODE MATERIALS WITH ni doping
     来源:学术文献

  • admixing

    n.    

    变形:   english【复】

  • 122.一种用于增大抗冲击改性的丙烯酸树脂的熔体流速的方法,该方法包括将所述抗冲击改性的丙烯酸树脂与基于该总掺杂组合物从5到60重量百分比的一种或多种低熔体粘度聚合物相混合的步骤。
     22. A method for increasing the melt flow rate of an impact modified acrylic resin comprising the step of admixing said impact modified acrylic resin with from 5 to 60 weight percent of one or more low melt viscosity polymer, based on the overall alloy composition.
     来源:专利文献   中文专利号:CN102597100A   英文专利号:US2012164364

  • ca doping

    n.    

    变形:   english【复】

  • 1(Nb、Ce、Si、Ca)掺杂对TiO_2压敏电阻陶瓷电性能的影响
     Influence of Nb, Ce, Si and ca doping on electrical properties of TiO_2 based varistors
     来源:学术文献

  • sn doping

    n.    

    变形:   english【复】

  • 1掺杂对ITO膜方阻和结构的影响
     Effect of sn doping Content on Sheet Resistance and Structural Properties of ITO Films
     来源:学术文献

  • body doping

    n.    

    变形:   english【复】

  • 1这允许增加的体掺杂,同时相对于源极而维持体上的低正向电压。
     This allows increased body doping while maintaining low forward voltage on the body with respect to the source.
     来源:专利文献   中文专利号:CN101764158A   英文专利号:US2010155842

  • dopen

    n.    

    变形:   english【复】

  • 1钾铷掺杂晶态C_(60)的电子结构与超导性的研究
     THE RELATION OF ELECTRONIC STRUCTURE AND SUPERCONDUCTIVITY OF CRYSTALLINGE dopenD C_(60)
     来源:学术文献

  • dye doping

    n.    

    变形:   english【复】

  • 1采用热刺激电流 /松弛谱图分析法 (TSC/RMA)研究了聚碳酸酯掺杂染料体系 (TDAA/PC)的玻璃化转变 ,发现染料含量增加 ,体系的玻璃化转变温度 (Tg)随之降低 ,玻璃化转变的温度范围变宽 .
     Thermal stimulated current/relaxation map analysis (TSC/RMA) is applied to study 2′-thiazole-4-(N,N-dimethyl)amino azobenzene/polycarbonate (TDAA/PC) system in an attempt to understand the influence of the dye doping content on the glass transition of the system.
     来源:学术文献

  • sol gel

    n.    

    变形:   english【复】

  • 1A)(i)选自二氧化钛或者氧化锌的至少一种半导体金属氧化物,或者(ii)至少一种半导体金属氧化物和热催化剂,或者(iii)通过溶胶凝胶处理而掺杂有热催化剂的半导体金属氧化物,或者(iv)通过湿浸渍掺杂有热催化剂的半导体金属氧化物;
     A) either (i) at least one semiconducting metal oxide selected from titanium dioxide or zinc oxide or (ii) at least one semiconducting metal oxide and a thermal catalyst, or (iii) a semiconducting metal oxide doped with thermal catalyst by sol gel processing, or (iv) a semiconducting metal oxide doped with thermal catalyst by wet impregnation;
     来源:专利文献   中文专利号:CN102365695A   英文专利号:US2012115271

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